SI2309 Description
Features VDS (V) =-60V ID =-1.25 A (VGS =-10V) RDS(ON) ＜ 340mΩ (VGS =-10V) RDS(ON) ＜ 550mΩ (VGS =-4.5V) Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish Equivalent Circuit D G S SI2309 N-Channel MOSFET SOT 23 1. pulse width ≤ 300us, duty cycle ≤ 2%.
SI2309 Key Features
- VDS (V) =-60V
- ID =-1.25 A (VGS =-10V)
- RDS(ON) ＜ 340mΩ (VGS =-10V)
- RDS(ON) ＜ 550mΩ (VGS =-4.5V)
- Pb-Free Package May be Available. The G-Suffix Denotes a