SI2309 - N-Channel MOSFET

Key Features

s.
VDS (V) =-60V.
ID =-1.25 A (VGS =-10V).
RDS(ON) ＜ 340mΩ (VGS =-10V).
RDS(ON) ＜ 550mΩ (VGS =-4.5V).
Pb.
Free Package May be Available. The G.
Suffix Denotes a Pb.
Free Lead Finish Equivalent Circuit D G S SI2309 N-Channel MOSFET SOT 23 1. BASE 2.

SI2309 n-channel mosfet by TRR - Datasheet Preview

Datasheet Details

Part number	SI2309
Manufacturer	TRR
File Size	1.97 MB
Description	N-Channel MOSFET
Datasheet	SI2309 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
SI2309	P-Channel 60-V(D-S) MOSFET	CCSemi
SI2309DS	P-Channel MOSFET	Vishay Siliconix
SI2309DS	P-Channel Enhancement MOSFET	Kexin
SI2300	N-Channel MOSFET	Kexin
SI2300	N-Channel MOSFET	HAOCHANG

Other Datasheets by TRR

Part Number	Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

■ Features ● VDS (V) =-60V ● ID =-1.25 A (VGS =-10V) ● RDS(ON) ＜ 340mΩ (VGS =-10V) ● RDS(ON) ＜ 550mΩ (VGS =-4.5V) ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish Equivalent Circuit D G S SI2309 N-Channel MOSFET SOT 23 1. BASE 2. EMITTER 3. COLLECTOR Unit : mm ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current *1,*2 Ta = 25℃ Ta = 70℃ Pulsed Drain Current Avalanche Current L=0.1mH Power Dissipation *1,*2 Ta = 25℃ Ta = 70℃ Thermal Resistance.Junction- to-Ambient t ≤5 sec Steady State *1 Thermal Resistance.Junction- to-Case *1 Junction Temperature Storage Temperature Range *1 Surface Mounted on FR4 Board. *2 t ≤ 5 sec.