SI2309 - P-Channel 60-V(D-S) MOSFET

Key Features

TrenchFET Power MOSFET.
RoHS Compliant Absolute Maximum Ratings Ta=25℃ Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current(TJ=150℃).
1,2 TA=25℃ TA=100℃ VGS ID Pulsed Drain Current IDM Avalanche Current Power Dissipation.
1,2 L = 0.1 mH TA=25℃ TA=70℃ IAS PD Operating Junction and Storage Temperature Range Tj. Tstg Maximum Junction-to-Ambient.
2 RthJA Maximum Junction-to-Ambient.
3.
1. Pulse Width limited by maximum jun.

SI2309 p-channel 60-v(d-s) mosfet by CCSemi - Datasheet Preview

Datasheet Details

Part number	SI2309
Manufacturer	CCSemi
File Size	324.79 KB
Description	P-Channel 60-V(D-S) MOSFET
Datasheet	SI2309 Datasheet

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MOSFET P-Channel 60-V(D-S) MOSFET SI2309 Features ◆ TrenchFET Power MOSFET ◆ RoHS Compliant Absolute Maximum Ratings Ta=25℃ Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current(TJ=150℃) *1,2 TA=25℃ TA=100℃ VGS ID Pulsed Drain Current IDM Avalanche Current Power Dissipation*1,2 L = 0.1 mH TA=25℃ TA=70℃ IAS PD Operating Junction and Storage Temperature Range Tj.Tstg Maximum Junction-to-Ambient*2 RthJA Maximum Junction-to-Ambient*3 *1. Pulse Width limited by maximum junction temperature. *2. Surface Mounted on FR4 Board, t≤5sec. *3. Surface Mounted on FR4 Board. Rating -60 ±20 -1.25 -0.85 -8 -5 1.25 0.8 -55 to 150 145 175 Unit V V A A A W ℃ ℃/W www.canctech.com Revision 2016/8/15 @2016-2017 CCSemi .