| Part Number | SI2309 Datasheet |
|---|---|
| Manufacturer | TRR |
| Overview |
■ Features
● VDS (V) =-60V ● ID =-1.25 A (VGS =-10V) ● RDS(ON) ＜ 340mΩ (VGS =-10V) ● RDS(ON) ＜ 550mΩ (VGS =-4.5V) ● Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
Equival.
* VDS (V) =-60V * ID =-1.25 A (VGS =-10V) * RDS(ON) ＜ 340mΩ (VGS =-10V) * RDS(ON) ＜ 550mΩ (VGS =-4.5V) * Pb *Free Package May be Available. The G *Suffix Denotes a Pb *Free Lead Finish Equivalent Circuit D G S SI2309 N-Channel MOSFET SOT 23 1. BASE 2. EMITTER 3. COLLECTOR Unit : mm * Absolute Maximum. |
SI2309 Datasheet and Specifications PDF
The SI2309 is a N-Channel MOSFET.
| Part Number | SI2309 Datasheet |
|---|---|
| Description | P-Channel 60-V(D-S) MOSFET |
| Manufacturer | CCSemi |
| Overview |
MOSFET
P-Channel 60-V(D-S) MOSFET
SI2309
Features
◆ TrenchFET Power MOSFET ◆ RoHS Compliant
Absolute Maximum Ratings Ta=25℃
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage Continuo.
* TrenchFET Power MOSFET * RoHS Compliant Absolute Maximum Ratings Ta=25℃ Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current(TJ=150℃) *1,2 TA=25℃ TA=100℃ VGS ID Pulsed Drain Current IDM Avalanche Current Power Dissipation*1,2 L = 0.1 mH TA=25℃ TA=70℃ I. |