| Part Number | SI2309DS Datasheet |
|---|---|
| Manufacturer | Kexin Semiconductor |
| Overview | SMD Type P-Channel Enhancement MOSFET SI2309DS (KI2309DS) Ƶ Features ƽ VDS (V) =-60V ƽ ID =-1.25 A (VGS =-10V) ƽ RDS(ON) ˘ 340m¡ (VGS =-10V) ƽ RDS(ON) ˘ 550m¡ (VGS =-4.5V) G1 S2 627 . ƽ VDS (V) =-60V ƽ ID =-1.25 A (VGS =-10V) ƽ RDS(ON) ˘ 340m¡ (VGS =-10V) ƽ RDS(ON) ˘ 550m¡ (VGS =-4.5V) G1 S2 627 3 3D 1 2 MOSFET 8QLW PP *DWH 6RXUFH 'UDL. |
SI2309DS Datasheet and Specifications PDF
The SI2309DS is a P-Channel Enhancement MOSFET.
| Part Number | SI2309DS Datasheet |
|---|---|
| Description | P-Channel MOSFET |
| Manufacturer | Vishay |
| Overview | Si2309DS Vishay Siliconix P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) -60 rDS(on) (W) 0.340 @ VGS = -10 V 0.550 @ VGS = -4.5 V ID (A) - 1.25 -1 TO-236 (SOT-23) G 1 3 D S 2 Top View Si. nix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS(on). |