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SI2301BDS - P-Channel Enhancement MOSFET

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Kexin

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SI2301BDS P-Channel Enhancement MOSFET by Kexin - Datasheet Preview — Datasheet preview – SI2301BDS

Datasheet Details

Part number	SI2301BDS
Manufacturer	Kexin
File Size	1.68 MB
Description	P-Channel Enhancement MOSFET
Datasheet	SI2301BDS Datasheet
Additional preview pages of the SI2301BDS datasheet.

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Features

s.
VDS (V) =-20V.
RDS(ON) ＜ 100mΩ (VGS =-4.5V).
RDS(ON) ＜ 150mΩ (VGS =-2.5V) G1 S2 3D.
Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ =150℃).
1 Ta=25℃ Ta=70℃ Pulsed Drain Current.
2 Power Dissipation.
1 Ta=25℃ Ta=70℃ Thermal Resistance. Junction- to-Ambient.
1.
3 Junction Temperature Storage Temperature Range Symbol VDS VGS ID IDM PD RthJA TJ Tstg.
1 Surface Mounted on F.

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Published: Oct 15, 2024 |