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SI2301BDS Datasheet P-channel Enhancement MOSFET

Manufacturer: Kexin Semiconductor

Overview: SMD Type P-Channel Enhancement MOSFET SI2301BDS (KI2301BDS) MOSFET.

Key Features

  • s.
  • VDS (V) =-20V.
  • RDS(ON) ＜ 100mΩ (VGS =-4.5V).
  • RDS(ON) ＜ 150mΩ (VGS =-2.5V) G1 S2 3D.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ =150℃).
  • 1 Ta=25℃ Ta=70℃ Pulsed Drain Current.
  • 2 Power Dissipation.
  • 1 Ta=25℃ Ta=70℃ Thermal Resistance. Junction- to-Ambient.
  • 1.
  • 3 Junction Temperature Storage Temperature Range Symbol VDS VGS ID IDM PD RthJA TJ Tstg.
  • 1 Surface Mounted on F.

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