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SI2301BDS - P-Channel Enhancement MOSFET

Key Features

  • s.
  • VDS (V) =-20V.
  • RDS(ON) ＜ 100mΩ (VGS =-4.5V).
  • RDS(ON) ＜ 150mΩ (VGS =-2.5V) G1 S2 3D.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ =150℃).
  • 1 Ta=25℃ Ta=70℃ Pulsed Drain Current.
  • 2 Power Dissipation.
  • 1 Ta=25℃ Ta=70℃ Thermal Resistance. Junction- to-Ambient.
  • 1.
  • 3 Junction Temperature Storage Temperature Range Symbol VDS VGS ID IDM PD RthJA TJ Tstg.
  • 1 Surface Mounted on F.

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SMD Type P-Channel Enhancement MOSFET SI2301BDS (KI2301BDS) MOSFET ■ Features ● VDS (V) =-20V ● RDS(ON) ＜ 100mΩ (VGS =-4.5V) ● RDS(ON) ＜ 150mΩ (VGS =-2.5V) G1 S2 3D ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ =150℃) *1 Ta=25℃ Ta=70℃ Pulsed Drain Current *2 Power Dissipation *1 Ta=25℃ Ta=70℃ Thermal Resistance.Junction- to-Ambient *1 *3 Junction Temperature Storage Temperature Range Symbol VDS VGS ID IDM PD RthJA TJ Tstg *1 Surface Mounted on FR4 Board, t ≤ 5 sec. *2 Pulse width limited by maximum junction temperature. *3 Surface Mounted on FR4 Board. +0.2 2.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.2 0-0.1 +0.1 0.68 -0.1 +0.2 1.6 -0.1 +0.2 1.1 -0.1 0.