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Si2301ADS
New Product
Vishay Siliconix
P-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
–20
rDS(on) (W)
0.130 @ VGS = –4.5 V 0.190 @ VGS = –2.5 V
ID (A)b
–2.0 –1.6
TO-236 (SOT-23)
G
1 3 D
S
2
Top View Si2301DS (1A)* *Marking Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)b Pulsed Drain Currenta Continuous Source Current (Diode Conduction)b Power Dissipationb Operating Junction and Storage Temperature Range TA= 25_C TA= 70_C PD TJ, Tstg TA= 25_C TA= 70_C ID IDM IS –0.75 0.9 0.57 –55 to 150
Symbol
VDS VGS
5 sec
–20 "8 –2.0 –1.6 –10
Steady State
Unit
V
–1.75 –1.4 A –0.6 0.7 0.
SI2301ADS Datasheet
