SI2302 Datasheet | HAOHAI

3.5A, 20V 贴片N沟道场效应管 产品参数规格书 　N 沟道增强型MOS 场效应管 　N-Channel Enhancement Mode Field Effect Transistor 　　Features 　- 20V, 3.5A, RDS(ON)=60mΩ @VGS=4.5V 　- High dense cell design for extremely low RDS(ON) 　- Rugged and reliable 　- Lead free product is acquired 　- SOT-23 Package 　- Marking Code: A2 　　Case Material: Molded Plastic. 　　UL Flammability Classification Rating 94V-0 Internal Block Diagram D HNM2302（SOT-23） D HNM2302 N-Channel MOSFETs HNM2302 N-Channel Enhancement Mode Field Effect Transistor 对应其他工业型号 2302 SI2302 AO2302 GM2302 元件标识（打印） S SOT-23 内部结构 G SOT-23 管脚排列 　- MAXIMUM RATINGS 最大額定值 Characteristic 特性参数 Symbol 符号 Drain-Source Voltage 漏极-源极电压 Gate- Source Voltage 栅极-源极电压 Drain...