Datasheet Summary
UMW SI2306A
30V N-ChanneI MOSFET
1.Description
The SI2306A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.
2.Features
VDS(V)=30V RDS(ON)=35mΩ(VGS=10V), ID=4A RDS(ON)<50mΩ(VGS=4.5V), ID=3.5A
3.Pinning information
Pin
Symbol Description SOT-23
GATE
SOURCE
DRAIN
1...
