SI2306A Overview
The SI2306A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.
| Part number | SI2306A |
|---|---|
| Datasheet | SI2306A Datasheet PDF (Download) |
| File Size | 719.92 KB |
| Manufacturer | UMW |
| Description | 30V N-ChanneI MOSFET |
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The SI2306A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
| SiPU | Si2306 | N-Channel Enhancement Mode Field Effect Transistor | SiPU |
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SI2306 | N-Channel Enhancement Mode Field Effect Transistor | MCC |
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Si2306BDS | N-Channel 30-V (D-S) MOSFET | Vishay |