The SI2306A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.
| Part Number | Manufacturer | Description |
|---|---|---|
| Si2306 | SiPU | N-Channel Enhancement Mode Field Effect Transistor |
| SI2306 | Micro Commercial Components | N-Channel Enhancement Mode Field Effect Transistor |
| SI2306DS | Kexin Semiconductor | 30V N-Channel MOSFET |
| SI2300 | HAOCHANG | N-Channel MOSFET |
| SI2300 | CCSemi | N-Channel MOSFET |
| SI2303BDS | Vishay | P-Channel MOSFET |
| Si2304BDS | Vishay | N-channel MOSFET |
| Si2300 | SiPU | N-Channel MOSFET |
| SI2301 | YANGJING | P-Channel MOSFET |
| SI2305DS | TOPSKY | P-Channel Power MOSFET |
