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SI2306A - 30V N-ChanneI MOSFET

General Description

The SI2306A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

2.

Key Features

  • VDS(V)=30V RDS(ON)=35mΩ(VGS=10V), ID=4A RDS(ON).

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Datasheet Details

Part number SI2306A
Manufacturer UMW
File Size 719.92 KB
Description 30V N-ChanneI MOSFET
Datasheet download datasheet SI2306A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UMW SI2306A 30V N-ChanneI MOSFET 1.Description The SI2306A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. 2.Features VDS(V)=30V RDS(ON)=35mΩ(VGS=10V), ID=4A RDS(ON)<50mΩ(VGS=4.5V), ID=3.5A 3.Pinning information Pin Symbol Description SOT-23 3 1 G GATE 2 S SOURCE 3 D DRAIN 1 2 4.Absolute Maximum Ratings TA= 25°C Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current TJ=150°C *1 Pulsed Drain Current Power Dissipation *1 Thermal Resistance.