SI2306DS Datasheet | Kexin Semiconductor

Features - RDS(ON) ＜ 57mΩ (VGS =-10V) - RDS(ON) ＜ 94 mΩ (VGS =-4.5V) +0.1 2.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 0-0.1 +0.1 0.38 -0.1 +0.1 1.3 -0.1 +0.1 0.97 -0.1 Unit: mm 0.1 +0.05 -0.01 11.. BGasaete 22..ESmiotutrecre 33..c Dolrlaeicntor Absolute Maximum Ratings Ta = 25 Drain-source voltage Gate-source voltage Parameter Continuous drain current (TJ = 150 ) - 1,2 TA=25 -- TA=70 Pulsed drain current Continuous source current (diode conduction) - 1,2 Maximum Power dissipation - 1,2 -- TA=25 TA=70 Operating junction and storage temperature range Maximum Junction to Ambienta t 5 sec Steady State - 1 Surface Mounted on FR4 Board. - 2 t 5 sec Symbol VDS VGS ID IDM IS PD...