SI2306DS Datasheet PDF

FEATURES

● RDS(ON) ＜ 57mΩ (VGS =-10V)
● RDS(ON) ＜ 94 mΩ (VGS =-4.5V) D G S +0.1 2.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.1 0-0.1 +0.1 0.38 -0.1 +0.1 1.3 -0.1 +0.1 0.97 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 11.. BGasaete 22..ESmiotutrecre 33..cDolrlaeicntor

ABSOLUTE MAXIMUM RATINGS

Ta = 25 Drain-source voltage Gate-source voltage Parameter Continuous drain current (TJ = 150 ) *1,2 TA=25 -- TA=70 Pulsed drain current Continuous source current (diode conduction) *1,2 Maximum Power dissipation *1,2 -- TA=25 TA=70 Operating junction and storage temperature range Maximum Junction to Ambienta t 5 sec Steady State *1 Surface Mounted on FR4 Board. *2 t 5 sec Symbol VDS VGS ID IDM IS PD Tj,Tstg RthJA Rating 30 20 3.5 2.8 16 1.25 1.25 0.8 -55 to +150 100 130 Unit V V A A A W /W 1 SSMMDD TTyyppee SI2306DS (KI2306DS) MOSFICET

ELECTRICAL CHARACTERISTICS

Ta = 25 Parameter Drain-source breakdown voltage Gate threshold voltage Gate-body leakage Zero gate voltage dra...