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P-Channel 8 V (D-S) MOSFET
Si2305CDS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.035 at VGS = - 4.5 V
-8
0.048 at VGS = - 2.5 V
0.065 at VGS = - 1.8 V
ID (A)d - 5.8 - 5.0 - 4.3
Qg (Typ.) 12 nC
TO-236 (SOT-23)
G1 S2
3D
Top View Si2305CDS (N5)* * Marking Code
Ordering Information: Si2305CDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES • Halogen-free According to IEC 61249-2-21
Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC
APPLICATIONS • Load Switch for Portable Devices • DC/DC Converter
S
G
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage Gate-Source Voltage
VDS
-8
V
VGS
±8
TC = 25 °C
- 5.
SI2305CDS Datasheet
