LD261 - GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter
Betriebs- und Lagertemperatur Operating and storage temperature range Sperrschichttemperatur Junction temperature Sperrspannung Reverse voltage Durchlaßstrom Forward current Stoßstrom, τ ≤ 10 µs, D = 0 Surge current Verlustleistung Power dissipation Wärmewiderstand Thermal resistance Symbol Symbol W
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Chip position LD 261 2.4 2.1 1.9 1.7 0.5 0.4 2.7 2.5 0.25 0.15 0.7 0.6 0 5 0.4 A A Radiant sensitive area (0.4 x 0.4) 1.4 1.0 Collector (BPX 81) Cathode (LD 261) 2.1 1.5 2.54 mm spacing 3.5 3.0 3.6 3.2 1) Detaching area for tools, flash not true to size.
Approx.
weight 0.03 g GEO06021 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
Wesentliche Merkmale q GaAs-IR-Lumineszenzdiode, hergestellt im
LD261 Features
* q GaAs infrared emitting diode, fabricated in a liquid phase epitaxy process q High reliability q Available in bins q Same package as BPX 81 Applications q Miniature photointerrupters q Punched tape readers q Industrial electronics q For control and drive circuits Typ Type LD 261 LD 261-5 Bestelln
