LD261 GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter

Siemens Group

Description

GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Chip position LD 261 2.4 2.1 1.9 1.7 0.5 0.4 2.7 2.5 0.25 0.15 0.7 0.6 0 5 0.4 A A Radiant se.
Betriebs- und Lagertemperatur Operating and storage temperature range Sperrschichttemperatur Junction temperature Sperrspannung Reverse voltage Durchl.

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Datasheet Specifications

Part number: LD261
Manufacturer: Siemens Group
File Size: 36.03 KB
Datasheet: LD261_SiemensSemiconductorGroup.pdf
Description: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter

Applications

* q Miniature photointerrupters q Punched tape readers q Industrial electronics q For control and drive circuits Typ Type LD 261 LD 261-5 Bestellnummer Ordering Code Q62703-Q395 Q62703-Q67 Gehäuse Package Leiterbandgehäuse, klares Epoxy-Gießharz, linsenförmig im 2.54-mm-Raster (1/10’’), Kathodenken

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LD261 GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Siemens Group

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