BAR63- Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)
BAR63-02W- Silicon PIN Diode (PIN diode for high speed switching of RF signals/ Low forward resistance/ small capacitance small inductance)
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BAR 65-02W
Silicon RF Switching Diode Preliminary data • Low loss, low capacitance PIN-diode • Band switch for TV-tuners • Series diode for mobile communication transmit-receiver switch
2
1
VES05991
Type BAR 65-02W
Marking N
Ordering Code Q62702-A1216
Pin Configuration 1=C 2=A
Package SCD-80
Maximum Ratings Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol Value 30 100 - 55 ...+125 - 55 ...+150 Unit V mA °C
VR IF T op T stg
Semiconductor Group Semiconductor Group
11
Jun-18-1998 1998-11-01
BAR 65-02W
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Reverse current Symbol min. Values typ. 0.93 max.