BAR63- Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)
BAR63-02W- Silicon PIN Diode (PIN diode for high speed switching of RF signals/ Low forward resistance/ small capacitance small inductance)
BAR63-03- Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)
BAR63-03W- Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)
BAR63-04- Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)
BAR63-04W- Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz)
BAR63-05- Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)
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Silicon PIN Diodes
BAR 60 BAR 61
q q
RF switch RF attenuator for frequencies above 10 MHz
Type BAR 60
Marking 60
Ordering Code (tape and reel) Q62702-A786
Pin Configuration
Package1) SOT-143
BAR 61
61
Q62702-A120
Maximum Ratings per Diode Parameter Reverse voltage Forward current Total power dissipation, TS ≤ 65 ˚C2) Junction temperature Storage temperature range Operating temperature range Thermal Resistance Junction - ambient 2) Junction - soldering point
1) 2)
Symbol VR IF Ptot Tj Tstg Top
Values 100 140 250 150 – 55 … + 150 – 55 … + 150
Unit V mA mW ˚C
Rth JA Rth JS
≤ ≤
580 340
K/W
For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.
Semiconductor Group
1
07.
BAR60 Datasheet
