BPX90 Datasheet - Siemens Semiconductor Group

BPX90 Silizium-Fotodiode Silicon Photodiode

Betriebs- und Lagertemperatur Operating and storage temperature range Löttemperatur (Lötstelle 2 mm vom Gehäuse entfernt bei Lötzeit t ≤ 3 s) Soldering temperature in 2 mm distance from case bottom (t ≤ 3 s) Sperrspannung Reverse voltage Verlustleistung, TA = 25 °C Total power dissipation Symbol Sym.

BPX90 Features

* q Especially suitable for applications from 400 nm to 1100 nm (BPX 90) and of 950 nm (BPX 90 F) q High photosensitivity q DIL plastic package with high packing density Applications q Industrial electronics q For control and drive circuits Typ Type BPX 90 BPX 90 F Bestellnummer Ordering Code Q62702

BPX90_SiemensSemiconductorGroup.pdf