BPX38 Datasheet - Siemens Semiconductor Group

BPX38 NPN-Silizium-Fototransistor Silicon NPN Phototransistor

Betriebs- und Lagertemperatur Operating and storage temperature range Löttemperatur bei Tauchlötung Lötstelle ≥ 2 mm vom Gehäuse, Lötzeit t ≤ 5 s Dip soldering temperature ≥ 2 mm distance from case bottom, soldering time t ≤ 5 s Löttemperatur bei Kolbenlötung Lötstelle ≥ 2 mm vom Gehäuse, Lötzeit t .

BPX38 Features

* q Especially suitable for applications from 450 nm to 1120 nm q High linearity q Hermetically sealed metal package (TO-18) with base connection, suitable up to 125 °C1) q Available in groups Applications q Photointerrupters q Industrial electronics q For control and drive circuits Typ Type BPX 38 B

BPX38_SiemensSemiconductorGroup.pdf