BPX66 Datasheet, Photodiode, Siemens Semiconductor Group

BPX66 Features

• Photodiode q Especially suitable for applications from 350 nm to 1100 nm q BPX 65: high photosensitivity q BPX 66: low reverse current (typ. 150 pA) q Hermetically sealed metal package (TO-18), su

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BPX66

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Siemens Semiconductor Group

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📄 Datasheet

Description:

Silizium-pin-fotodiode silicon pin photodiode. Betriebs- und Lagertemperatur Operating and storage temperature range Löttemperatur (Lötstelle 2 mm vom Gehäuse entfernt bei Lötzeit

BPX66 Application

• Applications from 350 nm to 1100 nm q BPX 65: high photosensitivity q BPX 66: low reverse current (typ. 150 pA) q Hermetically sealed metal package

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BPX66

Siemens Semiconductor Group

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