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BSM200GB120DN2 Datasheet - Siemens Semiconductor Group

BSM200GB120DN2 IGBT

BSM 200 GB 120 DN2 IGBT Power Module Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate Type BSM 200 GB 120 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage VCE IC Package HALF-BRIDGE 2 Ordering Code C67070-A2300-A70 1200V 290A Symbol Values 1200 1200 Unit V VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 290 200 TC = 25 °C TC = 80 °C Pulsed collector curre.

BSM200GB120DN2_SiemensSemiconductorGroup.pdf

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Datasheet Details

Part number:

BSM200GB120DN2

Manufacturer:

Siemens Semiconductor Group

File Size:

130.98 KB

Description:

Igbt.

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BSM200GB120DN2 BSM200GB120DN2 IGBT Siemens Semiconductor Group