Datasheet4U Logo Datasheet4U.com

BSM25GB120DN2 Datasheet - Siemens Semiconductor Group

BSM25GB120DN2 IGBT

BSM 25 GB 120 DN2 IGBT Power Module Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate Type BSM 25 GB 120 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage VCE IC Package HALF-BRIDGE 1 Ordering Code C67076-A2109-A70 1200V 38A Symbol Values 1200 1200 Unit V VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 38 25 TC = 25 °C TC = 80 °C Pulsed collector current, t.

BSM25GB120DN2_SiemensSemiconductorGroup.pdf

Preview of BSM25GB120DN2 PDF
BSM25GB120DN2 Datasheet Preview Page 2 BSM25GB120DN2 Datasheet Preview Page 3

Datasheet Details

Part number:

BSM25GB120DN2

Manufacturer:

Siemens Semiconductor Group

File Size:

111.41 KB

Description:

Igbt.

📁 Related Datasheet

BSM25GAL120DN2 IGBT (Siemens Semiconductor Group)

BSM25GD100D IGBT MODULE (Siemens)

BSM25GD120D2 IGBT (Siemens Semiconductor Group)

BSM25GD120DLCE3224 IGBT-Module (eupec GmbH)

BSM25GD120DN2 IGBT POWER MODULE (Eupec)

BSM25GD120DN2 IGBT POWER MODULE (Infineon Technologies)

BSM25GP120 TRANSISTOR (Eupec)

BSM250D17P2E004 SiC Power Module (ROHM)

TAGS

BSM25GB120DN2 BSM25GB120DN2 IGBT Siemens Semiconductor Group

BSM25GB120DN2 Distributor