Click to expand full text
BSM 25 GD 120 D2
IGBT Power Module
• Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type BSM 25 GD 120 D2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit V
VCE
IC
Package SIXPACK 1
Ordering Code C67076-A2505-A17
1200V 35A
VCE VCGR VGE IC
RGE = 20 kΩ
Gate-emitter voltage DC collector current
± 20 A 35 25
TC = 25 °C TC = 80 °C
Pulsed collector current, tp = 1 ms
ICpuls
70 50
TC = 25 °C TC = 80 °C
Power dissipation per IGBT
Ptot
200
W + 150 -55 ... + 150 ≤ 0.6 ≤1 2500 16 11 F 55 / 150 / 56 sec Vac mm K/W °C
TC = 25 °C
Chip temperature Storage temperature Thermal resistance, chip case Diode thermal resistance, chip case Insulation test voltage, t = 1min.
BSM25GD120D2 Datasheet
