BSM25GAL120DN2 Datasheet | Siemens Semiconductor Group

BSM 25 GAL 120 DN2 IGBT Power Module - Single switch with chopper diode - Including fast free-wheeling diodes - Package with insulated metal base plate Type BSM 25 GAL 120 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Package Ordering Code 1200V 38A HALF BRIDGE GAL 1 C67076-A2009-A70 Symbol Values 1200 1200 Unit V VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 38 25 TC = 25 °C TC = 80 °C Pulsed collector current, tp = 1 ms ICpuls 76 50 TC = 25 °C TC = 80 °C Power dissipation per IGBT Ptot W + 150 -55 ... + 150 ≤ 0.6 ≤1 ≤ 0.8 2500 20 11 F 55 / 150 / 56 Vac mm K/W °C TC = 25 °C Chip temperature Storage temperature Thermal resistance, chip case Diode thermal resistance, chip case Diode thermal resistance, chip-case,chopper Insulation test voltage, t = 1min. Creepage distance Clearance DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg Rth JC Rth JCD RTHJCDC Vis - Semiconductor Group Mar-29-1996...