BSM25GAL120DN2 Description
Static Characteristics Gate threshold voltage Values typ. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time Values typ. Unit Chopper Diode Chopper diode forward voltage VFC 2.3 1.8 2.8 -.
BSM25GAL120DN2 is IGBT manufactured by Siemens Semiconductor Group.
| Part Number | Description |
|---|---|
| BSM25GB120DN2 | IGBT |
| BSM25GD120D2 | IGBT |
| BSM200GAL120DN2 | IGBT |
| BSM200GB120 | IGBT |
| BSM200GB120DL | IGBT |
Static Characteristics Gate threshold voltage Values typ. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time Values typ. Unit Chopper Diode Chopper diode forward voltage VFC 2.3 1.8 2.8 -.