BSM25GD120D2 Datasheet | Siemens Semiconductor Group

BSM 25 GD 120 D2 IGBT Power Module - Power module - 3-phase full-bridge - Including fast free-wheel diodes - Package with insulated metal base plate Type BSM 25 GD 120 D2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit V Package SIXPACK 1 Ordering Code C67076-A2505-A17 1200V 35A VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 35 25 TC = 25 °C TC = 80 °C Pulsed collector current, tp = 1 ms ICpuls 70 50 TC = 25 °C TC = 80 °C Power dissipation per IGBT Ptot W + 150 -55 ... + 150 ≤ 0.6 ≤1 2500 16 11 F 55 / 150 / 56 sec Vac mm K/W °C TC = 25 °C Chip temperature Storage temperature Thermal resistance, chip case Diode thermal resistance, chip case Insulation test voltage, t = 1min. Creepage distance Clearance DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg Rth JC Rth JCD Vis - Semiconductor Group Feb-10-1997 BSM 25 GD 120 D2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.5 3.1 0.5 2 6.5 3...