BSM25GB120DN2 Description
Static Characteristics Gate threshold voltage Values typ. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time Values typ. Tj ≤ 150 °C 220 W Safe operating area IC = ƒ(VCE) parameter:.
BSM25GB120DN2 is IGBT manufactured by Siemens Semiconductor Group.
| Part Number | Description |
|---|---|
| BSM25GAL120DN2 | IGBT |
| BSM25GD120D2 | IGBT |
| BSM200GAL120DN2 | IGBT |
| BSM200GB120 | IGBT |
| BSM200GB120DL | IGBT |
Static Characteristics Gate threshold voltage Values typ. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time Values typ. Tj ≤ 150 °C 220 W Safe operating area IC = ƒ(VCE) parameter:.