BUZ205 Datasheet (Siemens Semiconductor Group)

BUZ205, Power Transistor

SIPMOS® Power Transistor q N channel q Enhancement mode q FREDFET BUZ 205 Type BUZ 205 VDS 400 V ID 6.0 A RDS (on) 1.0 Ω Package 1) TO-220 AB Ordering Code C67078-A1401-A2 Maximum Ratings Parameter Continuous drain current, TC = 35 ˚C Pulsed drain current, TC = 25 ˚C Drain-source voltage Drain-gate voltage, RGS = 20 kΩ Gate-source voltage Power dissipation, TC = 25 ˚C Operating and storage temperature range Thermal resistance, chip-case DIN humidity category, DIN 40 040 IEC climatic cate