BUZ211 Datasheet - Inchange Semiconductor

BUZ211 N-Channel MOSFET Transistor

BUZ211 Features

* Static Drain-Source On-Resistance : RDS(on) = 0.8Ω(Max)

* SOA is Power Dissipation Limited

* High input impedance

* High speed switching

* Minimum Lot-to-Lot variations for robust device performance and reliable operation

* DESCRITION Designed for applications such as switching

Datasheet Details

BUZ211

Inchange Semiconductor

223.85 KB

N-channel mosfet transistor.

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