BUZ211 N-Channel MOSFET Transistor

Inchange Semiconductor

Description

isc N-Channel Mosfet Transistor BUZ211 *.

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Datasheet Specifications

Part number: BUZ211
Manufacturer: Inchange Semiconductor
File Size: 223.85 KB
Datasheet: BUZ211-InchangeSemiconductor.pdf
Description: N-Channel MOSFET Transistor

Features

* Static Drain-Source On-Resistance : RDS(on) = 0.8Ω(Max)
* SOA is Power Dissipation Limited
* High input impedance
* High speed switching
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* such as switching regulators, switching converters, motor drivers,relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power .
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V V

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BUZ211 N-Channel MOSFET Transistor Inchange Semiconductor

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