BUZ308 - N-Channel MOSFET Transistor

Datasheet Summary

Features

High speed switching.
Low RDS(ON).
Easy driver for cost effective.

Inchange Semiconductor

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Datasheet Details

Part number	BUZ308
Manufacturer	Inchange Semiconductor
File Size	232.51 KB
Description	N-Channel MOSFET Transistor
Datasheet	BUZ308 Datasheet
Additional preview pages of the BUZ308 datasheet.

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Full PDF Text Transcription

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isc N-Channel Mosfet Transistor ·FEATURES ·High speed switching ·Low RDS(ON) ·Easy driver for cost effective application ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Automotive power actuator drivers ·Motor controls ·DC-DC converters ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 800 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=50℃ 2.6 A IDM Drain Current-Single Plused 10 A Ptot Total Dissipation@TC=25℃ 75 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.

Published: Jul 15, 2016 |