BUZ311 Datasheet - Siemens Semiconductor Group

BUZ311 Power Transistor

BUZ 311 SIPMOS ® Power Transistor N channel Enhancement mode Pin 1 G Pin 2 D Pin 3 S Type BUZ 311 VDS 1000 V ID 2.5 A RDS(on) 5Ω Package TO-218 AA Ordering Code C67078-A3102-A2 Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values 1000 1000 Unit V VDS VDGR ID RGS = 20 kΩ Continuous drain current A 2.5 TC = 25 °C Pulsed drain current IDpuls 10 TC = 25 °C Gate source voltage Power dissipation VGS Ptot ± 20 78 V W TC = 25 °C Operat.

BUZ311_SiemensSemiconductorGroup.pdf