Part number:
BUZ31H
Manufacturer:
File Size:
386.34 KB
Description:
Power-transistor.
SIPMOS ® Power Transistor
BUZ 31 H
* N channel
* Enhancement mode
* Avalanche-rated
* Normal Level . Pb-free lead pl.
BUZ31H
386.34 KB
Power-transistor.
SIPMOS ® Power Transistor
BUZ 31 H
* N channel
* Enhancement mode
* Avalanche-rated
* Normal Level . Pb-free lead pl.
📁 Related Datasheet
BUZ31 - Power Transistor
(Siemens Semiconductor Group)
BUZ 31
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Avalanche-rated
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 31
VDS
200 V
ID
14.5 A
RDS.
BUZ31 - Power Transistor
(Infineon Technologies AG)
BUZ 31
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Avalanche-rated
Pin 1
Pin 2
Pin 3
G
D
S
Type
VDS
ID
RDS(on)
Package
Ord.
BUZ31 - Power MOS Transistors
(Comset Semiconductors)
SEMICONDUCTORS
BUZ31 POWER MOS TRANSISTORS
FEATURE
• • • • • Nchannel Enhancement mode Avalanche-rated TO-220 envelope Compliance to RoHS.
ABSOLUTE .
BUZ31 - N-Channel MOSFET
(INCHANGE)
isc N-Channel Mosfet Transistor
·FEATURES ·Static Drain-Source On-Resistance
: RDS(on) = 0.2Ω(Max) ·High current capability ·150℃ operating temperatu.
BUZ310 - Power Transistor
(Siemens Semiconductor Group)
BUZ 310
SIPMOS ® Power Transistor
• N channel • Enhancement mode
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 310
VDS
1000 V
ID
2.5 A
RDS(on)
5Ω
Package.
BUZ311 - Power Transistor
(Siemens Semiconductor Group)
BUZ 311
SIPMOS ® Power Transistor
• N channel • Enhancement mode
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 311
VDS
1000 V
ID
2.5 A
RDS(on)
5Ω
Package.
BUZ312 - Power Transistor
(Siemens Semiconductor Group)
BUZ 312
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Avalanche-rated
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 312
VDS
1000 V
ID
6A
RDS(.
BUZ31H3045A - Power-Transistor
(Infineon)
BUZ31 H3045 A
. Pb-free lead plating; RoHS pliant . Halogen-free according to IEC61249-2-21
BUZ31 H3045A
PG-TO263-3
Pb-free Yes
Rev 2.1
2009-.
