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BUZ31H Datasheet - Infineon

BUZ31H Power-Transistor

SIPMOS ® Power Transistor BUZ 31 H N channel Enhancement mode Avalanche-rated Normal Level . Pb-free lead plating; RoHs compliant . Halogen-free according to IEC61249-2-21 Type BUZ 31 H VDS 200 V ID 14.5 A RDS(on) 0.2 Ω Maximum Ratings Parameter Continuous drain current TC = 30 ˚C Pulsed drain current TC = 25 ˚C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse ID = 14.5 A, VDD = 50 V, RG.

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Datasheet Details

Part number:

BUZ31H

Manufacturer:

Infineon ↗

File Size:

386.34 KB

Description:

Power-transistor.

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