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BUZ31H - Power-Transistor

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Part number BUZ31H
Manufacturer Infineon
File Size 386.34 KB
Description Power-Transistor
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SIPMOS ® Power Transistor BUZ 31 H • N channel • Enhancement mode • Avalanche-rated • Normal Level . Pb-free lead plating; RoHs compliant . Halogen-free according to IEC61249-2-21 Type BUZ 31 H VDS 200 V ID 14.5 A RDS(on) 0.2 Ω Maximum Ratings Parameter Continuous drain current TC = 30 ˚C Pulsed drain current TC = 25 ˚C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse ID = 14.5 A, VDD = 50 V, RGS = 25 Ω L = 1.
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