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BUZ31H3046 Datasheet - Infineon

BUZ31H3046 Power-Transistor

SIPMOS ® Power Transistor BUZ 31 H3046 N channel Enhancement mode Avalanche-rated Normal Level . Pb-free lead plating; RoHs compliant . Halogen-free according to IEC61249-2-21 Type VDS BUZ 31 H3046 200 V ID 14.5 A RDS(on) 0.2 Ω Maximum Ratings Parameter Continuous drain current TC = 30 ˚C Pulsed drain current TC = 25 ˚C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse ID = 14.5 A, VDD .

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Datasheet Details

Part number:

BUZ31H3046

Manufacturer:

Infineon ↗

File Size:

803.69 KB

Description:

Power-transistor.

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