BUZ312 Datasheet - Siemens Semiconductor Group

BUZ312_SiemensSemiconductorGroup.pdf

BUZ312 Datasheet Preview — Preview of BUZ312 PDF

Datasheet Details

Part number:

BUZ312

Manufacturer:

Siemens Semiconductor Group

File Size:

211.63 KB

Description:

Power transistor.

BUZ312, Power Transistor

BUZ 312 SIPMOS ® Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 312 VDS 1000 V ID 6A RDS(on) 1.5 Ω Package TO-218 AA Ordering Code C67078-S3129-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 6 Unit A ID IDpuls 24 TC = 33 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 6 17 mJ

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