BUZ312 Datasheet - Siemens Semiconductor Group

BUZ312 Power Transistor

BUZ 312 SIPMOS ® Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 312 VDS 1000 V ID 6A RDS(on) 1.5 Ω Package TO-218 AA Ordering Code C67078-S3129-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 6 Unit A ID IDpuls 24 TC = 33 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 6 17 mJ .

BUZ312_SiemensSemiconductorGroup.pdf