BUZ30A
Infineon ↗ Technologies AG
111.08 KB
Power transistor.
BUZ 30A
SIPMOS ® Power Transistor
* N channel
* Enhancement mode
* Avalanche-rated
Pin 1
Pin 2
Pin 3
G
D
S
Type
VDS
.
📁 Related Datasheet
BUZ305 - Power Transistor
(Siemens Semiconductor Group)
BUZ 305
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Avalanche-rated
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 305
VDS
800 V
ID
7.5 A
RD.
BUZ305 - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel Mosfet Transistor
·FEATURES ·High speed switching ·Low RDS(ON) ·Easy driver for cost effective application ·Minimum Lot-to-Lot variatio.
BUZ307 - Power Transistor
(Siemens Semiconductor Group)
BUZ 307
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Avalanche-rated
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 307
VDS
800 V
ID
3A
RDS(o.
BUZ307 - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel Mosfet Transistor
·FEATURES ·High speed switching ·Low RDS(ON) ·Easy driver for cost effective application ·Minimum Lot-to-Lot variatio.
BUZ308 - Power Transistor
(Siemens Semiconductor Group)
BUZ 308
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Avalanche-rated
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 308
VDS
800 V
ID
2.6 A
RD.
BUZ308 - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel Mosfet Transistor
·FEATURES ·High speed switching ·Low RDS(ON) ·Easy driver for cost effective application ·Minimum Lot-to-Lot variatio.
BUZ30A - Power Transistor
(Siemens Semiconductor Group)
BUZ 30A
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Avalanche-rated
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 30A
VDS
200 V
ID
21 A
RDS.
BUZ30A - N-Channel MOSFET
(INCHANGE)
isc N-Channel Mosfet Transistor
·FEATURES ·Static Drain-Source On-Resistance
: RDS(on) = 0.13Ω(Max) ·High current capability ·150℃ operating temperat.
