BUZ308 Datasheet - Siemens Semiconductor Group

BUZ308_SiemensSemiconductorGroup.pdf

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Datasheet Details

Part number:

BUZ308

Manufacturer:

Siemens Semiconductor Group

File Size:

242.10 KB

Description:

Power transistor.

BUZ308, Power Transistor

BUZ 308 SIPMOS ® Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 308 VDS 800 V ID 2.6 A RDS(on) 4Ω Package TO-218 AA Ordering Code C67078-S3109-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 2.6 Unit A ID IDpuls 10 TC = 50 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 3 8 mJ

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BUZ308 Power Transistor Siemens Semiconductor Group