BUZ31 - Power MOS Transistors

Comset Semiconductors

Datasheet Details

Part number	BUZ31
Manufacturer	Comset Semiconductors
File Size	156.07 KB
Description	Power MOS Transistors
Datasheet	BUZ31 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
BUZ31	Power Transistor	Siemens Semiconductor Group
BUZ31	Power Transistor	Infineon Technologies AG
BUZ31	N-Channel MOSFET	INCHANGE
BUZ310	Power Transistor	Siemens Semiconductor Group
BUZ311	Power Transistor	Siemens Semiconductor Group

Other Datasheets by Comset Semiconductors

Part Number	Description
BUZ71	N-Channel Enhancement Mode Power MOS Transistors
BUZ73A	N-Channel Enhancement Mode Power MOS Transistors
BUZ74	N-Channel Enhancement Mode Power MOS Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

SEMICONDUCTORS BUZ31 POWER MOS TRANSISTORS FEATURE • • • • • Nchannel Enhancement mode Avalanche-rated TO-220 envelope Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VDS IDS IDM IAR EAR EAS VGS RDS(on) PT tJ tstg Ratings http://www.DataSheet4U.net/ Value 200 14.5 58 14.5 9 200 20 0.2 95 -55 to +150 -55 to +150 Unit V A Drain-Source Voltage Continuous Drain Current TC= 37°C Pulsed Drain Current TC= 25°C Avalanche Current, Limited by Tjmax Avalanche Energy, Periodic Limited by Tjmax Avalanche Energy, Single pulse ID = 14.5 A, VDD = 50 V, RGS = 25 Ω L = 1.