| Part Number | BUZ31 |
|---|---|
| Manufacturer | Infineon |
| Overview | BUZ 31 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 31 200 V 14.5 A 0.2 Ω TO-220 A. ameter Symbol min. Values typ. max. Unit Static Characteristics Drain- source breakdown voltage V(BR)DSS 200 - V VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C Gate threshold voltage VGS(th) 2.1 3 4 µA 0.1 10 1 100 nA 10 100 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS VDS = 200 V, VGS =. |
BUZ31 Datasheet
The BUZ31 is a Power Transistor.
| Part Number | BUZ31 |
|---|---|
| Description | Power Transistor |
| Manufacturer | Siemens Semiconductor Group |
| Overview | BUZ 31 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 31 VDS 200 V ID 14.5 A RDS(on) 0.2 Ω Package TO-220 AB Ordering Code C6707. Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 200 3 0.1 10 10 0.16 4 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 2.1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 100 µA VDS = 200 V, VGS = 0 V, Tj = 25 . |
| Part Number | BUZ31 |
|---|---|
| Description | Power MOS Transistors |
| Manufacturer | Comset Semiconductors |
| Overview |
SEMICONDUCTORS
BUZ31 POWER MOS TRANSISTORS
FEATURE
• • • • • Nchannel Enhancement mode Avalanche-rated TO-220 envelope Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS Symbol
VDS IDS IDM IAR EAR EAS VGS.
* * * * * Nchannel Enhancement mode Avalanche-rated TO-220 envelope Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VDS IDS IDM IAR EAR EAS VGS RDS(on) PT tJ tstg Ratings http://www.DataSheet4U.net/ Value 200 14.5 58 14.5 9 200 20 0.2 95 -55 to +150 -55 to +150 Unit V A Drain-Source Voltage. |
| Part Number | BUZ31 |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel Mosfet Transistor
·FEATURES ·Static Drain-Source On-Resistance
: RDS(on) = 0.2Ω(Max) ·High current capability ·150℃ operating temperature ·High speed switching ·Minimum Lot-to-Lot varia.
*Static Drain-Source On-Resistance : RDS(on) = 0.2Ω(Max) *High current capability *150℃ operating temperature *High speed switching *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *High current , high speed switching *Solenoid and relay drivers *DC-DC. |