• Part: BUZ31
  • Description: Power Transistor
  • Manufacturer: Siemens Semiconductor Group
  • Size: 197.30 KB
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Datasheet Summary

BUZ 31 SIPMOS ® Power Transistor - N channel - Enhancement mode - Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 31 200 V 14.5 A RDS(on) 0.2 Ω Package TO-220 AB Ordering Code C67078-S.1304-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 14.5 Unit A ID IDpuls TC = 30 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 14.5 9 mJ ID = 14.5 A, VDD = 50 V, RGS = 25 Ω L = 1.42 mH, Tj = 25 °C Gate source voltage Power dissipation 200 VGS Ptot ± 20 95 TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case...