| Part number | BUZ31L |
|---|---|
| Datasheet | BUZ31L_SiemensSemiconductorGroup.pdf |
| File Size | 194.68 KB |
| Manufacturer | Siemens Semiconductor Group (now Infineon) |
| Description | Power Transistor |
|
|
Static Characteristics Drain- source breakdown voltage Values typ. Dynamic Characteristics Transconductance Values typ. Reverse Diode Inverse diode continuous forward current IS TC = 25 °C Inverse diode direct current,pulsed A 1.2 180 1.2 13.5 54 V 1.6 ns µC Values typ.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
BUZ31L | Power Transistor | Infineon Technologies AG |
|
BUZ31 | Power Transistor | Infineon Technologies AG |
 |
BUZ31 | Power MOS Transistors | Comset Semiconductors |
 |
BUZ31 | N-Channel MOSFET | INCHANGE |
 |
BUZ31H | Power-Transistor | Infineon |
See all Siemens Semiconductor Group (now Infineon) datasheets
| Part Number | Description |
|---|---|
| BUZ31 | Power Transistor |
| BUZ310 | Power Transistor |
| BUZ311 | Power Transistor |
| BUZ312 | Power Transistor |
| BUZ305 | Power Transistor |
| BUZ307 | Power Transistor |
| BUZ308 | Power Transistor |
| BUZ30A | Power Transistor |
| BUZ32 | Power Transistor |
| BUZ323 | Power Transistor |
