• Part: BUZ31L
  • Description: Power Transistor
  • Manufacturer: Siemens Semiconductor Group
  • Size: 194.68 KB
Download BUZ31L Datasheet PDF
BUZ31L page 2
Page 2
BUZ31L page 3
Page 3

Datasheet Summary

BUZ 31 L SIPMOS ® Power Transistor - N channel - Enhancement mode - Avalanche-rated - Logic Level Pin 1 G Type BUZ 31 L Pin 2 D Pin 3 S 200 V 13.5 A RDS(on) 0.2 Ω Package TO-220 AB Ordering Code C67078-S1322-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 13.5 Unit A ID IDpuls TC = 28 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 13.5 9 mJ ID = 13.5 A, VDD = 50 V, RGS = 25 Ω L = 1.65 mH, Tj = 25 °C Gate source voltage Gate-source peak voltage,aperiodic Power dissipation 200 VGS Vgs Ptot ± 14 ± 20 TC = 25 °C Operating temperature...