Datasheet Summary
BUZ 311
SIPMOS ® Power Transistor
- N channel
- Enhancement mode
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 311
1000 V
2.5 A
RDS(on)
5Ω
Package TO-218 AA
Ordering Code C67078-A3102-A2
Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values 1000 1000 Unit V
VDS VDGR ID
RGS = 20 kΩ
Continuous drain current
A 2.5
TC = 25 °C
Pulsed drain current
IDpuls
TC = 25 °C
Gate source voltage Power dissipation
VGS Ptot
± 20 78
TC = 25 °C
Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1
Tj Tstg RthJC RthJA
-55 ... ...+ 150 °C...