• Part: BUZ312
  • Description: Power Transistor
  • Manufacturer: Siemens Semiconductor Group
  • Size: 211.63 KB
Download BUZ312 Datasheet PDF
BUZ312 page 2
Page 2
BUZ312 page 3
Page 3

Datasheet Summary

BUZ 312 SIPMOS ® Power Transistor - N channel - Enhancement mode - Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 312 1000 V 6A RDS(on) 1.5 Ω Package TO-218 AA Ordering Code C67078-S3129-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 6 Unit A ID IDpuls TC = 33 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 6 17 mJ ID = 6 A, VDD = 50 V, RGS = 25 Ω L = 43.8 mH, Tj = 25 °C Gate source voltage Power dissipation 830 VGS Ptot ± 20 150 TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal...