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BUZ312 - Power Transistor

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Datasheet Details

Part number BUZ312
Manufacturer Siemens Semiconductor Group
File Size 211.63 KB
Description Power Transistor
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BUZ 312 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 312 VDS 1000 V ID 6A RDS(on) 1.5 Ω Package TO-218 AA Ordering Code C67078-S3129-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 6 Unit A ID IDpuls 24 TC = 33 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 6 17 mJ ID = 6 A, VDD = 50 V, RGS = 25 Ω L = 43.
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