• Part: BUZ305
  • Description: Power Transistor
  • Manufacturer: Siemens Semiconductor Group
  • Size: 70.50 KB
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Datasheet Summary

BUZ 305 SIPMOS ® Power Transistor - N channel - Enhancement mode - Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 305 800 V 7.5 A RDS(on) 1Ω Package TO-218 AA Ordering Code C67078-S3134-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 7.5 Unit A ID IDpuls TC = 31 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 7.5 16 mJ ID = 7.5 A, VDD = 50 V, RGS = 25 Ω L = 27.7 mH, Tj = 25 °C Gate source voltage Power dissipation 830 VGS Ptot ± 20 150 TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal...