• Part: BUZ308
  • Description: Power Transistor
  • Manufacturer: Siemens Semiconductor Group
  • Size: 242.10 KB
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Datasheet Summary

BUZ 308 SIPMOS ® Power Transistor - N channel - Enhancement mode - Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 308 800 V 2.6 A RDS(on) 4Ω Package TO-218 AA Ordering Code C67078-S3109-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 2.6 Unit A ID IDpuls TC = 50 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 3 8 mJ ID = 3 A, VDD = 50 V, RGS = 25 Ω L = 66.6 mH, Tj = 25 °C Gate source voltage Power dissipation 320 VGS Ptot ± 20 75 TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal...