Datasheet Summary
BUZ 307
SIPMOS ® Power Transistor
- N channel
- Enhancement mode
- Avalanche-rated
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 307
800 V
3A
RDS(on)
3Ω
Package TO-218 AA
Ordering Code C67078-S3100-A2
Maximum Ratings Parameter Continuous drain current Symbol Values 3 Unit A
ID IDpuls
TC = 35 °C
Pulsed drain current
TC = 25 °C
Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse
IAR EAR EAS
3 8 mJ
ID = 3 A, VDD = 50 V, RGS = 25 Ω L = 66.6 mH, Tj = 25 °C
Gate source voltage Power dissipation 320
VGS Ptot
± 20 75
TC = 25 °C
Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance,...
