BUZ307 Datasheet - Siemens Semiconductor Group

BUZ307_SiemensSemiconductorGroup.pdf

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Datasheet Details

Part number:

BUZ307

Manufacturer:

Siemens Semiconductor Group

File Size:

212.35 KB

Description:

Power transistor.

BUZ307, Power Transistor

BUZ 307 SIPMOS ® Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 307 VDS 800 V ID 3A RDS(on) 3Ω Package TO-218 AA Ordering Code C67078-S3100-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 3 Unit A ID IDpuls 12 TC = 35 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 3 8 mJ ID =

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BUZ307 Power Transistor Siemens Semiconductor Group