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BUZ32
Semiconductor
Data Sheet
October 1998
File Number 2416.1
9.5A, 200V, 0.400 Ohm, N-Channel Power MOSFET
Features
• 9.5A, 200V
[ /Title This is an N-Channel enhancement mode silicon gate power • rDS(ON) = 0.400Ω (BUZ32) field effect transistor designed for applications such as • SOA is Power Dissipation Limited /Subject switching regulators, switching converters, motor drivers, • Nanosecond Switching Speeds (9.5A, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. 200V, • Linear Transfer Characteristics This type can be operated directly from integrated circuits. 0.400 • High Input Impedance Ohm, N- Formerly developmental type TA17412.
BUZ32 Datasheet
