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BUZ45
Semiconductor
Data Sheet
October 1998
File Number 2257.1
9.6A, 500V, 0.600 Ohm, N-Channel Power MOSFET
Features
• 9.6A, 500V
[ /Title IThis is an N-Channel enhancement mode silicon gate • rDS(ON) = 0.600Ω (BUZ45) power field effect transistor designed for applications such • SOA is Power Dissipation Limited /Subject as switching regulators, switching converters, motor drivers, • Nanosecond Switching Speeds (9.6A, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. 500V, • Linear Transfer Characteristics This type can be operated directly from integrated circuits. 0.600 • High Input Impedance Ohm, N- Formerly developmental type TA17435.
BUZ45 Datasheet
