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BUZ45A
Semiconductor
Data Sheet
October 1998
File Number 2258.1
8.3A, 500V, 0.800 Ohm, N-Channel Power MOSFET
Features
• 8.3A, 500V
[ /Title This is an N-Channel enhancement mode silicon gate power • rDS(ON) = 0.800Ω (BUZ45 field effect transistor designed for applications such as • SOA is Power Dissipation Limited A) switching regulators, switching converters, motor drivers, /Subject relay drivers, and drivers for high power bipolar switching • Nanosecond Switching Speeds transistors requiring high speed and low gate drive power. (8.3A, • Linear Transfer Characteristics This type can be operated directly from integrated circuits. 500V, • High Input Impedance 0.800 Formerly developmental type TA17425.
BUZ45A Datasheet
