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BUZ101

N-Channel MOSFET Transistor

BUZ101 Features

* Drain Current : ID= 29A@ TC=25℃

* Drain Source Voltage : VDSS= 50V(Min)

* Static Drain-Source On-Resistance : RDS(on) = 0.06Ω(Max) @ VGS= 10V

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION

* motor drive, D

BUZ101 General Description


*motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 50 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 29 A IDM Drain Current-Single Pluse 116 A PD Tot.

BUZ101 Datasheet (288.35 KB)

Preview of BUZ101 PDF

Datasheet Details

Part number:

BUZ101

Manufacturer:

Inchange Semiconductor

File Size:

288.35 KB

Description:

N-channel mosfet transistor.

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BUZ101 N-Channel MOSFET Transistor Inchange Semiconductor

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