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BUZ305 - N-Channel MOSFET Transistor

Datasheet Summary

Features

  • High speed switching.
  • Low RDS(ON).
  • Easy driver for cost effective.

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Datasheet preview – BUZ305

Datasheet Details

Part number BUZ305
Manufacturer Inchange Semiconductor
File Size 231.84 KB
Description N-Channel MOSFET Transistor
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isc N-Channel Mosfet Transistor ·FEATURES ·High speed switching ·Low RDS(ON) ·Easy driver for cost effective application ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Automotive power actuator drivers ·Motor controls ·DC-DC converters ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 800 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=31℃ 7.5 A IDM Drain Current-Single Plused 30 A Ptot Total Dissipation@TC=25℃ 150 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.
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