BUZ100L Datasheet, Transistor, Siemens Semiconductor Group

PDF File Details

Part number:

BUZ100L

Manufacturer:

Siemens Semiconductor Group

File Size:

186.72kb

Download:

📄 Datasheet

Description:

Power transistor.

TAGS

📁 Related Datasheet

BUZ100 - Power Transistor (Siemens Semiconductor Group)
BUZ 100 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • Ultra low on-resistance • 175°C operating temperat.

BUZ100 - N-Channel MOSFET (INCHANGE)
isc N-Channel Mosfet Transistor ·FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 0.018Ω(Max) ·Ultra low on-resistance ·Fast Switching ·175℃ o.

BUZ100S - Power Transistor (Siemens Semiconductor Group)
BUZ 100 S SPP77N05 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in.

BUZ100SL - Power Transistor (Siemens Semiconductor Group)
BUZ 100 SL SPP70N05L SIPMOS ® Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt rated • 175°C operating tempe.

BUZ100SL-4 - Power Transistor (Siemens Semiconductor Group)
Preliminary data BUZ 100SL-4 SIPMOS ® Power Transistor • Quad-channel • Enhancement mode • Logic level • Avalanche-rated • dv/dt rated Type BUZ 10.

BUZ10 - N-Channel Power MOSFET (STMicroelectronics)
® BUZ10 N - CHANNEL 50V - 0.06Ω - 23A TO-220 STripFET™ MOSFET T YPE BUZ 10 s s s s s V DSS 50 V R DS(o n) < 0.07 Ω ID 23 A TYPICAL RDS(on) = 0.0.

BUZ10 - Power Transistor (Siemens Semiconductor Group)
BUZ 10 Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 10 VDS 50.

BUZ10 - N-Channel MOSFET (INCHANGE)
isc N-Channel Mosfet Transistor ·FEATURES ·Drain Current –ID=23A@ TC=25℃ ·Static Drain-Source On-Resistance : RDS(on) = 0.07Ω(Max) ·175℃ operating te.

BUZ101 - Power Transistor (Siemens)
BUZ 101 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • Low on-resistance • 175°C operating temperature •.

BUZ101 - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor BUZ101 FEATURES ·Drain Current : ID= 29A@ TC=25℃ ·Drain Source Voltage : VDSS= 50V(Min) ·Static Drain-Source On-Resi.