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BUZ100 - N-Channel MOSFET

Datasheet Summary

Features

  • Static Drain-Source On-Resistance : RDS(on) = 0.018Ω(Max).
  • Ultra low on-resistance.
  • Fast Switching.
  • 175℃ operating temperature.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet preview – BUZ100

Datasheet Details

Part number BUZ100
Manufacturer INCHANGE
File Size 225.38 KB
Description N-Channel MOSFET
Datasheet download datasheet BUZ100 Datasheet
Additional preview pages of the BUZ100 datasheet.

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Full PDF Text Transcription

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isc N-Channel Mosfet Transistor ·FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 0.018Ω(Max) ·Ultra low on-resistance ·Fast Switching ·175℃ operating temperature ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High current , high speed switching ·Solenoid and relay drivers ·DC-DC & DC-AC converters ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 50 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=101℃ 60 A IDM Drain Current-Single Plused 240 A Ptot Total Dissipation@TC=25℃ 250 W Tj Max.
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