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BUZ11 - N-Channel MOSFET

BUZ11 Description

isc N-Channel Mosfet Transistor BUZ11 *.

BUZ11 Features

* Static Drain-Source On-Resistance : RDS(on) = 0.04Ω(Max)
* SOA is Power Dissipation Limited
* High input impedance
* High speed switching
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

BUZ11 Applications

* such as switching regulators, switching converters, motor drivers,relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power .
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 50 V VG

📥 Download Datasheet

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Datasheet Details

Part number
BUZ11
Manufacturer
INCHANGE
File Size
224.16 KB
Datasheet
BUZ11-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE BUZ11-like datasheet