Datasheet4U Logo Datasheet4U.com

BUZ10 - N-Channel MOSFET

BUZ10 Description

isc N-Channel Mosfet Transistor *.

BUZ10 Features

* Drain Current
* ID=23A@ TC=25℃
* Static Drain-Source On-Resistance : RDS(on) = 0.07Ω(Max)
* 175℃ operating temperature
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* High current , high speed

BUZ10 Applications

* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

📥 Download Datasheet

Preview of BUZ10 PDF
datasheet Preview Page 2

Datasheet Details

Part number
BUZ10
Manufacturer
INCHANGE
File Size
224.61 KB
Datasheet
BUZ10-INCHANGE.pdf
Description
N-Channel MOSFET

📁 Related Datasheet

  • BUZ100 - Power Transistor (Siemens Semiconductor Group)
  • BUZ100L - Power Transistor (Siemens Semiconductor Group)
  • BUZ100S - Power Transistor (Siemens Semiconductor Group)
  • BUZ100SL - Power Transistor (Siemens Semiconductor Group)
  • BUZ100SL-4 - Power Transistor (Siemens Semiconductor Group)
  • BUZ101 - Power Transistor (Siemens)
  • BUZ101L - Power Transistor (Siemens Semiconductor Group)
  • BUZ101S - Power Transistor (Siemens Semiconductor Group)

📌 All Tags

INCHANGE BUZ10-like datasheet